Indium arsenide (InAs)
Application field of indium arsenide monocrystals is production of photodetectors, photodiodes and infrared spectrum lasers, as well as electro-optical converters.
| Growth method | Czochralski method using melt liquid encapsulation (LEC) | |||
| Crystallographic orientation of ingot axis | (100), (111) | |||
| Minimum ingot diameter, mm | 50,8; 76,2 | |||
| Material | unalloyed | alloyed | ||
| alloying agent |
none | S | Zn or Mn | |
| polarity of conductivity | n | n | p | |
| carrier concentration (77Ê), cm-3 | ≤3õ1016 | 1×1017-3×1018 | 1õ1017-5×1019 | |
| mobility (77Ê), cm22/V·sec |
≥40000 | ≥10000 | ≥100 | |
| Dislocation density, cm-2 | Ø 50.8 mm Ø 76.2 mm |
<5×104
<8×104
|
<5×104
<8×104
|
<5×104
<8×104
|
Delivery of monocrystals having parameters different from those specified in the Table is possible.