CdHgTe epitaxial layers
Parameters of CdxHg1-xTe epitaxial structures of n and p-type (Experimental-industrial production)
| working surface sizes, mm2 | ø30, 20×20 |
| working surface sizes, mm2 | ø37, 20×30 |
| layer thickness, mcm | 15±5 |
| composition, CdTe mol fraction, x | x=0,208÷0,230 x=0,207÷0,300 |
| composition homogeneity by area, CdTe mol fraction CdTe, Δx | ±0,002 |
| polarity of conductivity | n, p |
| majority carrier concentration at 77Ê, cm-3 | n=(1,0÷5,0)·1014 p=(0,5÷3,0)·1016 |
| majority carrier mobility at 77Ê, cm2/V·sec | µn≥1,0·105 µp≥300 |
| photoconduction relaxation time (77Ê), sec | ≥3·10-7(n-type) ≥3·10-8(p-type) |
| dislocation density, cm-2 | <5·104 |
| lineages, second phase inclusions | none |
Potential production volume: up to 1000 cm2 per year.
Potential application field: production of photodetectors for spectral range of 3-5 and 8-12 mcm.
Product consumers: PJSC "Metallurgical Plant "Sapfir", FSUE NPO "Orion", FSUE NPO "Alfa"