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Production and service

Technology for producing polycrystalline siliconSpecial equipment for semiconductor and metal productionGallium arsenide (GaAs)Indium arsenide (InAs)Gallium antimonide (GaSb)Indium antimonide (InSb)Thallium and silver halogenidesGermaniumCadmium-zinc-tellurium crystals (CdZnTe)CdZnTe substratesCdHgTe epitaxial layersInGaAsP/InP and InGaAsSb/GaSb epitaxial layersHigh purity compoundsHigh purity niobium High-purity indiumHigh purity galliumRheniumNickel addition alloysTitanium solder alloysMagnetron sputtering targetsWater-activated chemical current sourcesRare metal nanopowdersBeneficiation of ores and manufactured raw materials

Designing of the enterprises

Complex project structureList of works

Analysis and certification

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Council of Young Scientists
Awards and diplomas
Awards and diplomas
2008 - 2010

2004 - 2007


JSC «GIREDMET»
Tel. +7(495) 981-30-10
Fax +7(495) 951-62-25
e-mail: pyn@giredmet.ru